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SCI Article

Static and Dynamic Water Motion-Induced Instability in Oxide Thin-Film Transistors and Its Suppressi
Author Kim, Jaekyun (Dept Photon & Nanoelect);
Corresponding Author Info Kim, YH (reprint author), Sungkyunkwan Univ, SKKU Adv Inst Nanotechnol SAINT, Suwon 16419, South Korea.; Kim, YH (reprint author), Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 16419, South Korea.; Park, SK (reprint author), Chung Ang Univ, Sch Elect &
E-mail 메일skpark@cau.ac.kr 메일 yhkim76@skku.edu
Document Type Article
Source ACS APPLIED MATERIALS & INTERFACES Volume:9 Issue:31 Pages:26161-26168 Published:2017
Times Cited 0
External Information pdfhttp://dx.doi.org/10.1021/acsami.7b05948
Abstract Here, we report static and dynamic water motion-induced instability in indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) and its effective suppression with the use of a simple, solution-processed low-k (epsilon similar to 1.9) fluoroplastic resin (FPR) passivation layer. The liquid-contact electrification effect, in which an undesirable drain current modulation is induced by a dynamic motion of a charged liquid such as water, can cause a significant instability in IGZO TFTs. It was found that by adopting a thin (similar to 44 nm) FPR passivation layer for IGZO TFTs, the current modulation induced by the water-contact electrification was greatly reduced in both off- and on-states of the device. In addition, the FPR-passivated IGZO TFTs exhibited an excellent stability to static water exposure (a threshold voltage shift of +0.8 V upon 3600 s of water soaking), which is attributed to the hydrophobicity of the FPR passivation layer. Here, we discuss the origin of the current instability caused by the liquid-contact electrification as well as various static and dynamic stability tests for IGZO TFTs. On the basis of our findings, we believe that the use of a thin, solution-processed FPR passivation layer is effective in suppressing the static and dynamic water motion-induced instabilities, which may enable the realization of high-performance and environment-stable oxide TFTs for emerging wearable and skin-like electronics.
Web of Science Categories Nanoscience & Nanotechnology; Materials Science, Multidisciplinary
Funding Korea Institute of Energy Technology Evaluation and Planning (KETEP) - Ministry of Trade, Industry & Energy, Republic of Korea [20154030200870]; National Research Foundation of Korea (NRF) - Ministry of Science, ICT & Future Planning [NRF-2014R1A4A1008474
Language English
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