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SCI Article

Effect of hydrogen on the device performance and stability characteristics of amorphous InGaZnO thin
Author Han, Ki-Lim (Div Mat Sci & Engn); Ok, Kyung-Chul (Div Mat Sci & Engn); Cho, Hyeon-Su (Div Mat Sci & Engn); 박진성 (Div Mat Sci & Engn); Oh, Saeroonter (Div Elect Engn);
Corresponding Author Info Park, JS (reprint author), Hanyang Univ, Div Mat Sci & Engn, 222 Wangsimni Ro, Seoul 04763, South Korea.; Oh, S (reprint author), Hanyang Univ, Div Elect Engn, Ansan 15588, Gyeonggi Do, South Korea.
E-mail 메일sroonter@hanyang.ac.kr 메일 jsparklime@hanyang.ac.kr
Document Type Article
Source APPLIED PHYSICS LETTERS Volume:111 Issue:6 Pages:- Published:2017
Times Cited 0
External Information pdfhttp://dx.doi.org/10.1063/1.4997926
Abstract We investigate the influence of the multi-layered buffer consisting of SiO2/SiNx/SiO2 on amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs). The multi-layered buffer inhibits permeation of water from flexible plastic substrates and prevents degradation of overlying organic layers. The a-IGZO TFTs with a multi-layered buffer suffer less positive bias temperature stress instability compared to the device with a single SiO2 buffer layer after annealing at 250 degrees C. Hydrogen from the SiNx layer diffuses into the active layer and reduces electron trapping at loosely bound oxygen defects near the SiO2/a-IGZO interface. Quantitative analysis shows that a hydrogen density of 1.85 x 10(21) cm(-3) is beneficial to reliability. However, the multi-layered buffer device annealed at 350 degrees C resulted in conductive characteristics due to the excess carrier concentration from the higher hydrogen density of 2.12 x 10(21) cm(-3). Published by AIP Publishing.
Web of Science Categories Physics, Applied
Funding Hanyang University [HY-2016-N]; LG Display; MOTIE (Ministry of Trade, Industry and Energy) [10052020, 10052027]; KDRC (Korea Display Research Corporation)
Language English
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