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SCI-E Article

High electron mobility of beta-HgS colloidal quantum dots with doubly occupied quantum states
Author Kim, Jaekyun (Dept Photon & Nanoelect);
Corresponding Author Info Jeong, KS (reprint author), Korea Univ, Res Inst Nat Sci, Dept Chem, Seoul 02841, South Korea.; Park, SK (reprint author), Chung Ang Univ, Sch Elect & Elect Engn, Seoul 06974, South Korea.
E-mail 메일skpark@cau.ac.kr 메일 kwangsjeong@korea.ac.kr
Document Type Article
Source RSC ADVANCES Volume:7 Issue:61 Pages:38166-38170 Published:2017
Times Cited 0
External Information pdfhttp://dx.doi.org/10.1039/c7ra07193k
Abstract Electron occupation of the lowest electronic state of the conduction band (1S(e)) of a semiconducting nanocrystal offers numerous opportunities to efficiently utilize the quantization of the colloidal quantum dot. The steady-state electron occupation of the 1S(e) gives rise to unprecedented electrical, optical, and magnetic properties. We report an electron mobility of similar to 1.29 cm(2) V-1 s(-1) measured in a mercury sulfide (beta-HgS) quantum dot field effect transistor (FET), demonstrating the best carrier mobility for the HgS colloidal nanocrystal solid. The high electron mobility of the HgS nanocrystals with the doubly occupied quantum state originates from the efficient ligand exchange from oleylamine to thiocyanate, better carrier hopping via shortened inter-dot-distance, and the packing of nanocrystals by optimized thermal annealing conditions.
Web of Science Categories Chemistry, Multidisciplinary
Funding Basic Science Research Program through the National Research Foundation of Korea (NRF) - Ministry of Science, ICT, & Future Planning [NRF-2016R1C1B2013416]; Ministry of Education [NRF20100020209]; NRF grant - Korea government (MSIP) [2015R1C1A1A01052720]
Language English
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